Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.


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    Title :

    Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range


    Contributors:
    Akulova, Y.A. (author) / Thibeault, B.J. (author) / Ko, J. (author) / Coldren, L.A. (author)


    Publication date :

    1996-01-01


    Size :

    200509 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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