Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.
Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range
1996-01-01
200509 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1996
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