Dielectrically-apertured double-intracavity-contacted vertical-cavity InGaAs QW lasers with threshold currents of /spl sim/60 /spl mu/A at 77 K and 300 /spl mu/A at 300 K are reported. Single-mode output power up to 1.65 mW at 300 K is achieved due to the lasing from the second quantized subband of the quantum well.


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    Titel :

    Intracavity-contacted vertical-cavity lasers with submilliamp threshold currents over 77-300 K temperature range


    Beteiligte:
    Akulova, Y.A. (Autor:in) / Thibeault, B.J. (Autor:in) / Ko, J. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    200509 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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