The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SIC devices in power conversion systems. In this study, findings of SIC research at Oak Ridge National Laboratory (OWL), TN, USA, including SIC device design and system modeling studies, are discussed.


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    Title :

    Silicon carbide power device characterization for HEVs


    Contributors:
    Ozpinecil, B. (author) / Tolbert, L.M. (author) / Islam, S.K. (author)


    Publication date :

    2002-01-01


    Size :

    434547 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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