The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SIC devices in power conversion systems. In this study, findings of SIC research at Oak Ridge National Laboratory (OWL), TN, USA, including SIC device design and system modeling studies, are discussed.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Silicon carbide power device characterization for HEVs


    Beteiligte:
    Ozpinecil, B. (Autor:in) / Tolbert, L.M. (Autor:in) / Islam, S.K. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    434547 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Power Electronics in HEVs

    Mi, Chris / Masrur, M. Abul | Wiley | 2017


    A power oriented Ni-MH byttery for HEVs

    Johansson, A. / European Electric Road Vehicle Association | British Library Conference Proceedings | 2001


    A study of power transfer systems for HEVs

    Hanyu, Tomoyuki / Iwano, Hiroshi / Ooba, Hiraku et al. | Tema Archiv | 2005


    A Power Oriented Ni-MH Battery for HEVs

    Johansson, A. / Soria, M. L. / Hernandez, J. C. et al. | British Library Conference Proceedings | 2001


    Online energy management for HEVs

    Dextreit,C. / Changan UK Res.a.Dev.,GB | Kraftfahrwesen | 2015