We demonstrate an optically-pumped all-epitaxial 1.56 /spl mu/m VCSEL on an InP substrate which combined a simple InGaAs active region with AlAsSb-AlGaAsSb mirror stacks. The AlGaAsSb material system is well-suited for fabrication of high-reflectivity DBRs due to a significantly higher refractive index contrast than achievable using InAlGaAsP, particularly at 1.55 /spl mu/m.
Antimonide-based approaches for long-wavelength VCSELs
1998-01-01
154735 byte
Conference paper
Electronic Resource
English
Antimonide-Based Approaches for Long-Wavelength VCSELs
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