We demonstrate an optically-pumped all-epitaxial 1.56 /spl mu/m VCSEL on an InP substrate which combined a simple InGaAs active region with AlAsSb-AlGaAsSb mirror stacks. The AlGaAsSb material system is well-suited for fabrication of high-reflectivity DBRs due to a significantly higher refractive index contrast than achievable using InAlGaAsP, particularly at 1.55 /spl mu/m.


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    Title :

    Antimonide-based approaches for long-wavelength VCSELs


    Contributors:
    Klem, J.F. (author) / Blum, O. (author) / Lear, K. (author)


    Publication date :

    1998-01-01


    Size :

    154735 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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