We demonstrate an optically-pumped all-epitaxial 1.56 /spl mu/m VCSEL on an InP substrate which combined a simple InGaAs active region with AlAsSb-AlGaAsSb mirror stacks. The AlGaAsSb material system is well-suited for fabrication of high-reflectivity DBRs due to a significantly higher refractive index contrast than achievable using InAlGaAsP, particularly at 1.55 /spl mu/m.


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    Titel :

    Antimonide-based approaches for long-wavelength VCSELs


    Beteiligte:
    Klem, J.F. (Autor:in) / Blum, O. (Autor:in) / Lear, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    154735 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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