We report both MSM and p-i-n UV photodetectors with very fast 10%-90% rise times of 23 psec and 92 psec respectively. In order to verify the accuracy of our time domain measurements, we have also measured the frequency response of these photodetectors. The MSM devices with 2 /spl mu/m gap spacing indicate a bandwidth in excess of 16 GHz. The electrical bandwidth of the p-i-n devices is > 1.5 GHz.


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    Title :

    Very high-speed ultraviolet photodetectors fabricated on GaN


    Contributors:
    Carrano, J.C. (author) / Li, T. (author) / Brown, D. (author) / Grudowski, P.A. (author) / Eiting, C.J. (author) / Dupuis, R.D. (author) / Campbell, J.C. (author)


    Publication date :

    1998-01-01


    Size :

    256255 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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