We report both MSM and p-i-n UV photodetectors with very fast 10%-90% rise times of 23 psec and 92 psec respectively. In order to verify the accuracy of our time domain measurements, we have also measured the frequency response of these photodetectors. The MSM devices with 2 /spl mu/m gap spacing indicate a bandwidth in excess of 16 GHz. The electrical bandwidth of the p-i-n devices is > 1.5 GHz.
Very high-speed ultraviolet photodetectors fabricated on GaN
1998-01-01
256255 byte
Conference paper
Electronic Resource
English
Very High-Speed Ultraviolet Photodetectors Fabricated on GaN
British Library Conference Proceedings | 1998
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