High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The double-heterostructure (DH) LED devices consist of an n-type ZnSe:Cl layer, an active region consisting either of a ZnCdSe MQW (blue) or a ZnTeSe layer (green), and a p-type ZnSe:N layer deposited using a nitrogen plasma source.


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    Title :

    High-brightness light-emitting diodes grown by MBE on ZnSe substrates


    Contributors:
    Eason, D.B. (author) / Yu, Z. (author) / Hughes, W.C. (author) / Boney, C. (author) / Cook, J.W. (author) / Schetzina, J.F. (author) / Cantwell, G. (author) / Harsch, W.C. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 329-330 vol.1


    Publication date :

    1994-01-01


    Size :

    160536 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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