High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The double-heterostructure (DH) LED devices consist of an n-type ZnSe:Cl layer, an active region consisting either of a ZnCdSe MQW (blue) or a ZnTeSe layer (green), and a p-type ZnSe:N layer deposited using a nitrogen plasma source.


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    Titel :

    High-brightness light-emitting diodes grown by MBE on ZnSe substrates


    Beteiligte:
    Eason, D.B. (Autor:in) / Yu, Z. (Autor:in) / Hughes, W.C. (Autor:in) / Boney, C. (Autor:in) / Cook, J.W. (Autor:in) / Schetzina, J.F. (Autor:in) / Cantwell, G. (Autor:in) / Harsch, W.C. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 329-330 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    160536 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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