III-nitride VCSELs are fabricated by removing SiC substrate from the Ill-nitride cavity, and subsequent wafer bonding of the cavity and DBRs. Low-threshold lasing action in InGaN VCSELs with dielectric DBRs is observed at room temperature by optical pumping.


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    Title :

    Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors


    Contributors:
    Tawara, T. (author) / Gotoh, H. (author) / Akasaka, T. (author) / Kobayashi, N. (author) / Saitoh, T. (author)


    Publication date :

    2003-01-01


    Size :

    89472 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors

    Tawara, T. / Gotoh, H. / Akasaka, T. et al. | British Library Conference Proceedings | 2003




    Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors

    Jiang-Yong, Z. / Cai, L.-E. / Bao-Ping, Z. et al. | British Library Online Contents | 2009