III-nitride VCSELs are fabricated by removing SiC substrate from the Ill-nitride cavity, and subsequent wafer bonding of the cavity and DBRs. Low-threshold lasing action in InGaN VCSELs with dielectric DBRs is observed at room temperature by optical pumping.
Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors
01.01.2003
89472 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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