III-nitride VCSELs are fabricated by removing SiC substrate from the Ill-nitride cavity, and subsequent wafer bonding of the cavity and DBRs. Low-threshold lasing action in InGaN VCSELs with dielectric DBRs is observed at room temperature by optical pumping.


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    Titel :

    Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors


    Beteiligte:
    Tawara, T. (Autor:in) / Gotoh, H. (Autor:in) / Akasaka, T. (Autor:in) / Kobayashi, N. (Autor:in) / Saitoh, T. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    89472 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Low-threshold lasing of optically pumped InGaN vertical-cavity surface-emitting lasers with dielectric mirrors

    Tawara, T. / Gotoh, H. / Akasaka, T. et al. | British Library Conference Proceedings | 2003





    Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors

    Jiang-Yong, Z. / Cai, L.-E. / Bao-Ping, Z. et al. | British Library Online Contents | 2009