The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Fabrication of semiconductor optical amplifiers and a novel gain measuring technique


    Contributors:
    Yong-Zhen Huang, (author) / Wei-Hua Guo, (author) / Li-Juan Yu, (author) / Xiu-Ling Lu, (author) / Man-Qing Tan, (author) / Xiao-Yu Ma, (author)


    Publication date :

    2003-01-01


    Size :

    217409 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Fabrication of Semiconductor Optical Amplifiers and a Novel Gain Measuring Technique

    Huang, Y.-Z. / Guo, W.-H. / Yu, L.-H. et al. | British Library Conference Proceedings | 2003


    Cross-Gain Compression in Semiconductor Optical Amplifiers

    Contestabile, G. / Proietti, R. / Calabretta, N. et al. | British Library Online Contents | 2007



    Thermal profiling of gain saturation in semiconductor optical amplifiers

    Luerssen, D. / Hudgings, J. / Ram, R.J. et al. | IEEE | 2004


    Designing semiconductor optical amplifiers for low multichannel gain crosstalk

    Kasunic, K. J. / Tastavridis, K. / Lestrade, M. et al. | British Library Conference Proceedings | 2003