The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure


    Contributors:
    Jin, S.R. (author) / Sweeney, S.J. (author) / Knowles, G. (author) / Adams, A.R. (author) / Higashi, T. (author) / Riechert, H. (author) / Thijs, P.J.A. (author)


    Publication date :

    2002-01-01


    Size :

    126936 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Optical Investigation of Recombination Processes in GaInNAs, InGaAsP and AlGaInAs Quantum-Well Lasers using Hydrostatic Pressure

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    A Comparison of the Thermal Stability of InGaAsP, AlGaInAs and GaInNAs Quantum-Well Lasers for 1.3mum Operation

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    OMVPE Grown 1.3mum GaInNAs Quantum Well Lasers

    Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2002


    Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | British Library Conference Proceedings | 1992


    Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | IEEE | 1992