The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.
Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure
2002-01-01
126936 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2002
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