The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.


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    Titel :

    Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure


    Beteiligte:
    Jin, S.R. (Autor:in) / Sweeney, S.J. (Autor:in) / Knowles, G. (Autor:in) / Adams, A.R. (Autor:in) / Higashi, T. (Autor:in) / Riechert, H. (Autor:in) / Thijs, P.J.A. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    126936 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    OMVPE Grown 1.3mum GaInNAs Quantum Well Lasers

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    Auger Recombination in Strained and Unstrained InGaAs/InGaAsP Multiple Quantum Well Lasers

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    Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers

    Fuchs, G. / Schiedel, C. / Hangleiter, A. et al. | IEEE | 1992