In this paper, we demonstrate that highly advantageous thermal management properties of the SiC heatspreader are wholly compatible with direct diode pumping. We investigate the transverse and longitudinal mode behaviour of the high-power vertical external-cavity surface-emitting semiconductor laser with the intra-cavity heatspreader.


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    Title :

    Characteristics of high power VECSELs with silicon carbide heatspreaders


    Contributors:
    Hastie, J.E. (author) / Hopkins, J.-M. (author) / Calvez, S. (author) / Jeon, C.W. (author) / Burns, D. (author) / Dawson, M.D. (author) / Abram, R. (author) / Riis, E. (author) / Ferguson, A.I. (author)


    Publication date :

    2003-01-01


    Size :

    91790 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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