The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.


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    Title :

    Improvement in light-output efficiency of Near-Ultraviolet InGaN– GaN LEDs Fabricated on Stripe Patterned Sapphire Substrate


    Contributors:
    Lee, Y.J. (author) / Hsu, T.C. (author) / Kuo, H.C. (author) / Wang, S.C. (author) / Yang, Y.L. (author) / Yen, S.N. (author) / Chu, Y.T. (author) / Shen, Y.J. (author) / Hsieh, M.H. (author) / Jou, M.J. (author)


    Publication date :

    2005-01-01


    Size :

    215840 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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