This work reports on the simulation of the multiplication and excess noise in a 0.2 /spl mu/m thick InP multiplication region with a 1.5 /spl mu/m InGaAs absorption region. The effect of ionization in InGaAs appears to make very little difference to the multiplication and noise characteristics.


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    Title :

    Low noise avalanche photodiodes


    Contributors:


    Publication date :

    2005-01-01


    Size :

    132062 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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