This work reports on the simulation of the multiplication and excess noise in a 0.2 /spl mu/m thick InP multiplication region with a 1.5 /spl mu/m InGaAs absorption region. The effect of ionization in InGaAs appears to make very little difference to the multiplication and noise characteristics.
Low noise avalanche photodiodes
2005-01-01
132062 byte
Conference paper
Electronic Resource
English
Low noise avalanche photodiodes
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