This work reports on the simulation of the multiplication and excess noise in a 0.2 /spl mu/m thick InP multiplication region with a 1.5 /spl mu/m InGaAs absorption region. The effect of ionization in InGaAs appears to make very little difference to the multiplication and noise characteristics.
Low noise avalanche photodiodes
01.01.2005
132062 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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