Summary form only given. In this paper, we explain quantitatively the nature of the major emission band in Nichia LEDs. The experimental low-temperature (20 K) and room-temperature (RT) spectra were obtained by photoluminescence (PL). A broad impurity-related PL band, with an undulated envelope centered at 465 nm (2.67 eV), was observed at both low and room temperatures when the pump beam illuminated the active region.


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    Title :

    Impurity-related photoluminescence from InGaN LED material


    Contributors:
    Eliseev, P.G. (author) / Osinski, M. (author) / Phillips, B.S. (author) / Pei-Chih Chiu (author) / Mohs, G. (author) / Fluegel, B. (author) / Giessen, H. (author) / Peyghambarian, N. (author)


    Publication date :

    1995-01-01


    Size :

    122358 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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