Summary form only given. In this paper, we explain quantitatively the nature of the major emission band in Nichia LEDs. The experimental low-temperature (20 K) and room-temperature (RT) spectra were obtained by photoluminescence (PL). A broad impurity-related PL band, with an undulated envelope centered at 465 nm (2.67 eV), was observed at both low and room temperatures when the pump beam illuminated the active region.


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    Titel :

    Impurity-related photoluminescence from InGaN LED material


    Beteiligte:
    Eliseev, P.G. (Autor:in) / Osinski, M. (Autor:in) / Phillips, B.S. (Autor:in) / Pei-Chih Chiu (Autor:in) / Mohs, G. (Autor:in) / Fluegel, B. (Autor:in) / Giessen, H. (Autor:in) / Peyghambarian, N. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    122358 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Impurity-Related Photoluminescence from InGaN LED Material

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


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