We found that Li/sub 3/N diffusion makes a good ohmic contact to MOCVD-grown ZnSe layers. Hall measurement at 300 K showed that the hole concentration and resistivity is 8.6x10/sup 17/ cm/sup -3/ and 0.4 /spl Omega/cm for the diffused layers at 470/spl deg/C. This result is comparable to that reported for highly N-doped ZnSe layers by MBE. It indicates that L/sub 3/N diffusion is effective for solving the ohmic contact problem of MOVPE-grown p-ZnSe without adding any complicated structures.
Highly-doped p-ZnSe formation by Li/sub 3/N diffusion
Proceedings of LEOS'94 ; 1 ; 59-60 vol.1
1994-01-01
160629 byte
Conference paper
Electronic Resource
English
Highly-Doped p-ZnSe Formation by Li~3N Diffusion
British Library Conference Proceedings | 1994
|Cathodoluminescence in heavily-doped ZnSe
AIAA | 2000
|Chromium Diffusion Doping in ZnSe Crystals
British Library Conference Proceedings | 1997
|Thermal conductivity of heavily-doped ZnSe
AIAA | 2000
|