We found that Li/sub 3/N diffusion makes a good ohmic contact to MOCVD-grown ZnSe layers. Hall measurement at 300 K showed that the hole concentration and resistivity is 8.6x10/sup 17/ cm/sup -3/ and 0.4 /spl Omega/cm for the diffused layers at 470/spl deg/C. This result is comparable to that reported for highly N-doped ZnSe layers by MBE. It indicates that L/sub 3/N diffusion is effective for solving the ohmic contact problem of MOVPE-grown p-ZnSe without adding any complicated structures.


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    Title :

    Highly-doped p-ZnSe formation by Li/sub 3/N diffusion


    Contributors:
    Lim, S.W. (author) / Honda, T. (author) / Yanashima, K. (author) / Koyama, F. (author) / Kukimoto, H. (author) / Iga, K. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 59-60 vol.1


    Publication date :

    1994-01-01


    Size :

    160629 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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