We found that Li/sub 3/N diffusion makes a good ohmic contact to MOCVD-grown ZnSe layers. Hall measurement at 300 K showed that the hole concentration and resistivity is 8.6x10/sup 17/ cm/sup -3/ and 0.4 /spl Omega/cm for the diffused layers at 470/spl deg/C. This result is comparable to that reported for highly N-doped ZnSe layers by MBE. It indicates that L/sub 3/N diffusion is effective for solving the ohmic contact problem of MOVPE-grown p-ZnSe without adding any complicated structures.


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    Titel :

    Highly-doped p-ZnSe formation by Li/sub 3/N diffusion


    Beteiligte:
    Lim, S.W. (Autor:in) / Honda, T. (Autor:in) / Yanashima, K. (Autor:in) / Koyama, F. (Autor:in) / Kukimoto, H. (Autor:in) / Iga, K. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 59-60 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    160629 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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