Summary form only given. The present article is dedicated to an investigation of laser performance of Cr/sup 2+/:ZnSe crystals produced by the diffusion doping method. The advantages of this method are high quality of the host crystals and the ability to control impurity doping level by adjustment of the diffusion time and temperature. A slope efficiency as high as 30% and laser threshold as low as 14 /spl mu/J with respect to absorbed pump energy are achieved for the best samples for which the round trip passive loss is estimated to be approximately 12%.
Gain-switched laser performance of diffusion-doped Cr/sup 2+/:ZnSe
01.01.1999
279621 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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