We have previously demonstrated that the combination of strain and p-doping leads to substantial performance enhancements in the high-speed modulation characteristics of GaAs-based MQW lasers. Here, we investigate for the first time, both theoretically and experimentally, the improvements in the linewidth enhancement factor, /spl alpha/, resulting from the simultaneous addition of strain and p-doping in GaAs-based MQW lasers.<>


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    Title :

    /spl alpha/-factor improvements in high-speed p-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    156598 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English