We have previously demonstrated that the combination of strain and p-doping leads to substantial performance enhancements in the high-speed modulation characteristics of GaAs-based MQW lasers. Here, we investigate for the first time, both theoretically and experimentally, the improvements in the linewidth enhancement factor, /spl alpha/, resulting from the simultaneous addition of strain and p-doping in GaAs-based MQW lasers.<>
/spl alpha/-factor improvements in high-speed p-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers
Proceedings of LEOS '93 ; 574-575
1993-01-01
156598 byte
Conference paper
Electronic Resource
English
-Factor Improvements in High-Speed p-Doped In~0~.~3~5Ga~0~.~6~5As/GaAs MQW Lasers
British Library Conference Proceedings | 1993
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