A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.


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    Title :

    Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration


    Contributors:


    Publication date :

    1992-01-01


    Size :

    192288 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English