A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.
Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration
1992-01-01
192288 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1992
|High-power monolithic semiconductor diode lasers
IEEE | 2003
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