We propose a novel C auto-doping method for AlAs grown by MOCVD using trimethylaluminum (TMAI) and tertiarybutylarsine (TBAs) and applying C heavily doped AlAs films as p-type doped layers in InP material systems. Some new device applications are also proposed. We proposed an auto-doping technique which enables to control doping level by only changing the V-III ratio. To investigate doping conditions, we grew AlAs on GaAs substrates by MOCVD.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Heavy p-type carbon doping to AlAs for InP based optoelectronic devices


    Contributors:
    Sekiguchi, S. (author) / Miyamoto, T. (author) / Kimura, T. (author) / Koyama, F. (author) / Iga, K. (author)


    Publication date :

    1998-01-01


    Size :

    155344 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Heavy p-Type Carbon Doping to AlAs for InP Based Optoelectronic Devices

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Novel Applications of AlAs Oxide to Optoelectronic Devices

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Novel applications of AlAs oxide to optoelectronic devices

    Dupkus, P.D. / Bond, A.E. / Choi, W.J. et al. | IEEE | 1998


    Optoelectronic Devices in Optoelectronic Signal Processors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997