We propose a novel C auto-doping method for AlAs grown by MOCVD using trimethylaluminum (TMAI) and tertiarybutylarsine (TBAs) and applying C heavily doped AlAs films as p-type doped layers in InP material systems. Some new device applications are also proposed. We proposed an auto-doping technique which enables to control doping level by only changing the V-III ratio. To investigate doping conditions, we grew AlAs on GaAs substrates by MOCVD.
Heavy p-type carbon doping to AlAs for InP based optoelectronic devices
01.01.1998
155344 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Heavy p-Type Carbon Doping to AlAs for InP Based Optoelectronic Devices
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