We propose a novel C auto-doping method for AlAs grown by MOCVD using trimethylaluminum (TMAI) and tertiarybutylarsine (TBAs) and applying C heavily doped AlAs films as p-type doped layers in InP material systems. Some new device applications are also proposed. We proposed an auto-doping technique which enables to control doping level by only changing the V-III ratio. To investigate doping conditions, we grew AlAs on GaAs substrates by MOCVD.


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    Titel :

    Heavy p-type carbon doping to AlAs for InP based optoelectronic devices


    Beteiligte:
    Sekiguchi, S. (Autor:in) / Miyamoto, T. (Autor:in) / Kimura, T. (Autor:in) / Koyama, F. (Autor:in) / Iga, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    155344 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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