In this paper, the characterization of microdischarge based photodetectors, fabricated in p-type silicon cut on the (100) plane was reported. The results show the photosensitivities of four different devices to changes in incident optical power from a He-Ne laser operating at 633 nm. The interesting comparison shows that the response of the microdischarge based photodetector is an order of magnitude larger than that for the avalanche photodiode (APD).


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    Title :

    Photodetection in the visible and near-infrared with a silicon pyramidal microdischarge device


    Contributors:
    Ostrom, N.P. (author) / Park, S.-J. (author) / Ewing, J.J. (author) / Eden, J.G. (author)


    Publication date :

    2003-01-01


    Size :

    105620 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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