In this paper, the characterization of microdischarge based photodetectors, fabricated in p-type silicon cut on the (100) plane was reported. The results show the photosensitivities of four different devices to changes in incident optical power from a He-Ne laser operating at 633 nm. The interesting comparison shows that the response of the microdischarge based photodetector is an order of magnitude larger than that for the avalanche photodiode (APD).
Photodetection in the visible and near-infrared with a silicon pyramidal microdischarge device
2003-01-01
105620 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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