In this paper, the characterization of microdischarge based photodetectors, fabricated in p-type silicon cut on the (100) plane was reported. The results show the photosensitivities of four different devices to changes in incident optical power from a He-Ne laser operating at 633 nm. The interesting comparison shows that the response of the microdischarge based photodetector is an order of magnitude larger than that for the avalanche photodiode (APD).


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Photodetection in the visible and near-infrared with a silicon pyramidal microdischarge device


    Beteiligte:
    Ostrom, N.P. (Autor:in) / Park, S.-J. (Autor:in) / Ewing, J.J. (Autor:in) / Eden, J.G. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    105620 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





    Photodetection with Silicon Pyramidal Microdischarge Devices

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Microdischarge devices in silicon

    DeTemple, T.A. / Frame, J.W. / Wheeler, D.J. et al. | IEEE | 1997


    Characteristics of Microdischarge Devices in Silicon

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998