We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.
Record-low thresholds of InGaAsN/GaAs SQWs lasers
2004-01-01
171962 byte
Conference paper
Electronic Resource
English
Record-Low Thresholds of Long-Wavelength InGaAsN/GaAs SQWs Lasers
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