We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.


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    Title :

    Record-low thresholds of InGaAsN/GaAs SQWs lasers


    Contributors:
    Averbeck, R. (author) / Jaschke, G. (author) / Geelhaar, L. (author) / Riechert, H. (author)


    Publication date :

    2004-01-01


    Size :

    171962 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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