InGaAsN/GaAs wafers were grown by molecular beam epitaxy. Rapid thermal annealing of the wafers and photoluminescence measurements were performed. Ridge waveguide lasers with pulsed anodic oxides as the current-blocking layer were fabricated and characterized.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    InGaAsN/GaAs lasers fabricated with pulsed anodic oxides


    Contributors:
    Chongyang Liu, (author) / Wah, R.T.J. (author) / Shu Yuan, (author) / Wang, S.Z. (author) / Yoon, S.F. (author)


    Publication date :

    2003-01-01


    Size :

    26980 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    InGaAsN/GaAs lasers fabricated with pulsed anodic oxides

    Chongyang Liu, / Wah, R.T.J. / Shu Yuan, et al. | IEEE | 2003


    AlGaAs Lasers Fabricated with Pulsed Anodic Oxides

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Record-low thresholds of InGaAsN/GaAs SQWs lasers

    Averbeck, R. / Jaschke, G. / Geelhaar, L. et al. | IEEE | 2004


    Room-temperature pulsed operation of InGaAsN quantum dot lasers

    Gao, Q. / Buda, M. / Tan, H.H. et al. | IEEE | 2004


    Room-Temperature Pulsed Operation of InGaAsN Quantum Dot Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004