Pump-probe spectroscopy showed that low-temperature grown GaAs grown at a higher As pressure has a shorter carrier lifetime than that grown at a low As pressure for both as-grown and anneal conditions.


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    Title :

    Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: effect of arsenic pressure during MBE crystal growth


    Contributors:
    Yano, R. (author) / Hirayama, Y. (author) / Miyashita, S. (author) / Sasabu, H. (author) / Nakano, H. (author) / Uesugi, N. (author) / Uehara, S. (author)


    Publication date :

    2001-01-01


    Size :

    147551 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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