Pump-probe spectroscopy showed that low-temperature grown GaAs grown at a higher As pressure has a shorter carrier lifetime than that grown at a low As pressure for both as-grown and anneal conditions.
Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: effect of arsenic pressure during MBE crystal growth
2001-01-01
147551 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2001
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