Pump-probe spectroscopy showed that low-temperature grown GaAs grown at a higher As pressure has a shorter carrier lifetime than that grown at a low As pressure for both as-grown and anneal conditions.


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    Titel :

    Carrier lifetime of low-temperature grown GaAs measured by pump-probe spectroscopy: effect of arsenic pressure during MBE crystal growth


    Beteiligte:
    Yano, R. (Autor:in) / Hirayama, Y. (Autor:in) / Miyashita, S. (Autor:in) / Sasabu, H. (Autor:in) / Nakano, H. (Autor:in) / Uesugi, N. (Autor:in) / Uehara, S. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    147551 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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