The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Growth of multilayered epitaxial films by pulsed excimer laser ablation


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    185259 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Growth of Multilayered Epitaxial Films by Pulsed Excimer Laser Ablation

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Excimer Laser Ablation Of Human Tooth Enamel

    Nakano, H. / Nakayama, T. / Kubo, U. | IEEE | 1997




    Excimer laser ablation of borocarbide targets [4070-30]

    Amoruso, S. / Armenante, M. / Bruzzese, R. et al. | British Library Conference Proceedings | 2000