The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described.<>
Growth of multilayered epitaxial films by pulsed excimer laser ablation
Proceedings of LEOS '93 ; 770-771
1993-01-01
185259 byte
Conference paper
Electronic Resource
English
Growth of Multilayered Epitaxial Films by Pulsed Excimer Laser Ablation
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