The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described.<>
Growth of multilayered epitaxial films by pulsed excimer laser ablation
Proceedings of LEOS '93 ; 770-771
01.01.1993
185259 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Growth of Multilayered Epitaxial Films by Pulsed Excimer Laser Ablation
British Library Conference Proceedings | 1993
|Excimer Laser Ablation Of Human Tooth Enamel
IEEE | 1997
|Preparation of CuInSe2 thin films with large grain by excimer laser ablation
Online Contents | 1998
|Excimer laser ablation of borocarbide targets [4070-30]
British Library Conference Proceedings | 2000
|