Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As/sub 4/ was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.


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    Title :

    Research activities in MBE HgCdTe at SITP


    Contributors:
    He, L. (author) / Chen, L. (author) / Wu, J. (author) / Wu, Y. (author) / Wang, Y.Z. (author) / Xu, F.F. (author) / Yu, M.F. (author) / Qiao, Y.M. (author) / Yang, J.R. (author) / Li, Y.J. (author)


    Publication date :

    2004-01-01


    Size :

    168148 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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