Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As/sub 4/ was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.
Research activities in MBE HgCdTe at SITP
2004-01-01
168148 byte
Conference paper
Electronic Resource
English
Progress in MBE growth of HgCdTe at SITP [4795-05]
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