Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As/sub 4/ was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.


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    Titel :

    Research activities in MBE HgCdTe at SITP


    Beteiligte:
    He, L. (Autor:in) / Chen, L. (Autor:in) / Wu, J. (Autor:in) / Wu, Y. (Autor:in) / Wang, Y.Z. (Autor:in) / Xu, F.F. (Autor:in) / Yu, M.F. (Autor:in) / Qiao, Y.M. (Autor:in) / Yang, J.R. (Autor:in) / Li, Y.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    168148 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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