Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As/sub 4/ was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.
Research activities in MBE HgCdTe at SITP
01.01.2004
168148 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Progress in MBE growth of HgCdTe at SITP [4795-05]
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