We report on a monolithically integrated DFB master oscillator power amplifier (DFB-MOPA) in the material system GaInP/AlGaInP producing 300 mW of single-lobed power at 673 nm. The DFB-MOPA was realized on a GaInP/AlGaInP single quantum well structure, grown by low-pressure MOVPE. We studied the junction-up mounted DFB-MOPA under long-pulsed operation (20 /spl mu/s/1 % duty-cycle) at 10/spl deg/C to maintain most of the cw-operation characteristics. An L-I curve for three different oscillator currents is shown.


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    Title :

    Monolithically integrated DFB-MOPA at 670 nm wavelength


    Contributors:
    Lichtenstein, N. (author) / Gauggel, H.-P. (author) / Geng, C. (author) / Scholz, F. (author) / Schweizer, H. (author)


    Publication date :

    1997-01-01


    Size :

    135820 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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