We report on a monolithically integrated DFB master oscillator power amplifier (DFB-MOPA) in the material system GaInP/AlGaInP producing 300 mW of single-lobed power at 673 nm. The DFB-MOPA was realized on a GaInP/AlGaInP single quantum well structure, grown by low-pressure MOVPE. We studied the junction-up mounted DFB-MOPA under long-pulsed operation (20 /spl mu/s/1 % duty-cycle) at 10/spl deg/C to maintain most of the cw-operation characteristics. An L-I curve for three different oscillator currents is shown.


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    Titel :

    Monolithically integrated DFB-MOPA at 670 nm wavelength


    Beteiligte:
    Lichtenstein, N. (Autor:in) / Gauggel, H.-P. (Autor:in) / Geng, C. (Autor:in) / Scholz, F. (Autor:in) / Schweizer, H. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    135820 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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