An data-processing method has been developed to obtain the device parameters from the resistance-voltage (R-V) characteristics measured in long-wavelength HgCdTe photodiode.


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    Title :

    Study on parameters extraction from the dark characteristics of LW HgCdTe photodiode


    Contributors:
    Quan, Z.J. (author) / Li, Z.F. (author) / Hu, W.D. (author) / Ye, Z.H. (author) / Hu, X.N. (author) / Lu, W. (author)


    Publication date :

    2006-09-01


    Size :

    1043770 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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