An data-processing method has been developed to obtain the device parameters from the resistance-voltage (R-V) characteristics measured in long-wavelength HgCdTe photodiode.
Study on parameters extraction from the dark characteristics of LW HgCdTe photodiode
2006-09-01
1043770 byte
Conference paper
Electronic Resource
English
Modeling of dark characteristics for long-wavelength HgCdTe photodiode
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