Lasers with tensely strained GaAsP SQW were grown by MOVPE. P-up mounted devices achieved a cw output of nearly 7 W at 15/spl deg/C and >1.5 W at 85/spl deg/C heat sink temperature (aperture 100 /spl mu/m). Degradation rates of 1.2 10/sup -5//h@1 W, 25/spl deg/C have been obtained.
Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures
1998-01-01
146700 byte
Conference paper
Electronic Resource
English
Highly Reliable Tensily Strained 810 nm Qw Laserdiode Operating at High Temperatures
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