Lasers with tensely strained GaAsP SQW were grown by MOVPE. P-up mounted devices achieved a cw output of nearly 7 W at 15/spl deg/C and >1.5 W at 85/spl deg/C heat sink temperature (aperture 100 /spl mu/m). Degradation rates of 1.2 10/sup -5//h@1 W, 25/spl deg/C have been obtained.


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    Title :

    Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures


    Contributors:
    Pittroff, W. (author) / Bugge, F. (author) / Erbert, G. (author) / Knauer, A. (author) / Maege, J. (author) / Sebastian, J. (author) / Staske, R. (author) / Thies, A. (author) / Wenzel, H. (author) / Traenkle, G. (author)


    Publication date :

    1998-01-01


    Size :

    146700 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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