We report a fully inorganic technique for hybridizing MQW device arrays, that yields quasimonolithic levels of thermal conductivity, mechanical strength, and electrical parasitics, and permits a wide range of further postprocessing operations. We have demonstrated Au-Sn-based quasimonolithic hybridization to silicon VLSI of MQW electroabsorption modulators and detectors having a sophisticated vertical structure. The planarity of the process facilitates subsequent vacuum-deposition steps; the vertical device structure allows minimization of the footprint and parasitic capacitance; the chosen bond metallurgy is robust under subsequent high-temperature packaging operations. We believe that our technique offers valuable flexibility in the overall physical design of low-level optical interconnections for VLSI.


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    Title :

    Quasimonolithic hybridization of multiple quantum well electroabsorption modulator/detector arrays with silicon VLSI


    Contributors:


    Publication date :

    1999-01-01


    Size :

    284858 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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