We report a fully inorganic technique for hybridizing MQW device arrays, that yields quasimonolithic levels of thermal conductivity, mechanical strength, and electrical parasitics, and permits a wide range of further postprocessing operations. We have demonstrated Au-Sn-based quasimonolithic hybridization to silicon VLSI of MQW electroabsorption modulators and detectors having a sophisticated vertical structure. The planarity of the process facilitates subsequent vacuum-deposition steps; the vertical device structure allows minimization of the footprint and parasitic capacitance; the chosen bond metallurgy is robust under subsequent high-temperature packaging operations. We believe that our technique offers valuable flexibility in the overall physical design of low-level optical interconnections for VLSI.


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    Titel :

    Quasimonolithic hybridization of multiple quantum well electroabsorption modulator/detector arrays with silicon VLSI


    Beteiligte:
    Callahan, J.J. (Autor:in) / Martin, K.P. (Autor:in) / Drabik, T.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    284858 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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