Recently, a new class of photoconductors with excess-arsenic-related deep level defects, arsenic-ion-implanted (or GaAs:As/sup +/), has been the subject of intense study. Ultrafast carrier lifetimes, photoconductive and nonlinear optical responses were reported for as-implanted and RTA (rapid thermal annealing) annealed GaAs:As/sup +/. It is expected that the optimum furnace annealing will create arsenic precipitates which can enhance the performance of GaAs:As/sup +/ for photoconductive or nonlinear optical switching applications. The carrier dynamics of furnace-annealed GaAs:As/sup +/ is thus of substantial interests and is the focus of this paper.
Near-bandgap ultrafast optical responses of furnace annealed arsenic-ion-implanted GaAs
1997-01-01
145782 byte
Conference paper
Electronic Resource
English
Near-Bandgap Ultrafast Optical Responses of Furnaceannealed Aresonic-ion-implanted GaAs
British Library Conference Proceedings | 1997
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