Low-cost long-wavelength lasers operating at high temperatures without cooling systems are required for optical subscriber systems. A quantum-well active layer with a large conduction discontinuity is thought to be effective for improving high-temperature characteristics of long-wavelength lasers. In this paper, we report on gas-source MBE growth conditions, and the fabrication process and lasing properties of these newly developed InAsP/InAlGaAs laser diodes with high-temperature characteristics.


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    Title :

    InAsP/InAlGaAs lasers for high T/sub 0/ operation


    Contributors:
    Anan, T. (author) / Yamada, M. (author) / Tokutome, K. (author) / Sugou, S. (author)


    Publication date :

    1999-01-01


    Size :

    182608 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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