Low-cost long-wavelength lasers operating at high temperatures without cooling systems are required for optical subscriber systems. A quantum-well active layer with a large conduction discontinuity is thought to be effective for improving high-temperature characteristics of long-wavelength lasers. In this paper, we report on gas-source MBE growth conditions, and the fabrication process and lasing properties of these newly developed InAsP/InAlGaAs laser diodes with high-temperature characteristics.
InAsP/InAlGaAs lasers for high T/sub 0/ operation
1999-01-01
182608 byte
Conference paper
Electronic Resource
English
Low Threshold and High Temperature Characteristic of 1.3 mum InAsP/AlGaInAs MQW ACIS Lasers
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