In this work, keV proton irradiation, with subsequent thermal annealing, is used to create intermixing in a quantum well structure based on the GaAs-AlGaAs system. Low temperature photoluminescence (PL) was used to monitor the energy shift before and after intermixing. Comparison was also made between one set of samples annealed at 800 C in a metal-organic chemical-vapor-deposition (MOCVD) reactor.
Quantum well intermixing by proton irradiation
1995-01-01
188389 byte
Conference paper
Electronic Resource
English
Quantum Well Intermixing by Proton Irradiation
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