In this work, keV proton irradiation, with subsequent thermal annealing, is used to create intermixing in a quantum well structure based on the GaAs-AlGaAs system. Low temperature photoluminescence (PL) was used to monitor the energy shift before and after intermixing. Comparison was also made between one set of samples annealed at 800 C in a metal-organic chemical-vapor-deposition (MOCVD) reactor.


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    Title :

    Quantum well intermixing by proton irradiation


    Contributors:
    Tan, H.H. (author) / Jagadish, C. (author) / Gal, M. (author)


    Publication date :

    1995-01-01


    Size :

    188389 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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