In this work, keV proton irradiation, with subsequent thermal annealing, is used to create intermixing in a quantum well structure based on the GaAs-AlGaAs system. Low temperature photoluminescence (PL) was used to monitor the energy shift before and after intermixing. Comparison was also made between one set of samples annealed at 800 C in a metal-organic chemical-vapor-deposition (MOCVD) reactor.


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    Titel :

    Quantum well intermixing by proton irradiation


    Beteiligte:
    Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in) / Gal, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    188389 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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