We report fabrication of a VCSEL array using a selective area growth (SAG) technique by MOVPE. We have used a 2D steady-state finite-difference calculation to model the flux of materials on the masked and exposed areas of an annular-ring array pattern. The thickness and composition enhancements of perfectly-selectively grown InGaAs-GaAs-AlGaAs heterostructures measured from thickness profiler and cathodoluminescence measurements are in an excellent agreement with the modeled results.
Wavelength-division multiplexing vertical-cavity surface emitting laser arrays fabricated by selective area MOCVD growth
1998-01-01
147998 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1997
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British Library Conference Proceedings | 1997
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