We report fabrication of a VCSEL array using a selective area growth (SAG) technique by MOVPE. We have used a 2D steady-state finite-difference calculation to model the flux of materials on the masked and exposed areas of an annular-ring array pattern. The thickness and composition enhancements of perfectly-selectively grown InGaAs-GaAs-AlGaAs heterostructures measured from thickness profiler and cathodoluminescence measurements are in an excellent agreement with the modeled results.


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    Title :

    Wavelength-division multiplexing vertical-cavity surface emitting laser arrays fabricated by selective area MOCVD growth


    Contributors:
    Hou, H.Q. (author) / Choquette, K.D. (author) / Coltrin, M.E. (author) / Hammons, B.E. (author) / Geib, K.M. (author)


    Publication date :

    1998-01-01


    Size :

    147998 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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