We report fabrication of a VCSEL array using a selective area growth (SAG) technique by MOVPE. We have used a 2D steady-state finite-difference calculation to model the flux of materials on the masked and exposed areas of an annular-ring array pattern. The thickness and composition enhancements of perfectly-selectively grown InGaAs-GaAs-AlGaAs heterostructures measured from thickness profiler and cathodoluminescence measurements are in an excellent agreement with the modeled results.


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    Titel :

    Wavelength-division multiplexing vertical-cavity surface emitting laser arrays fabricated by selective area MOCVD growth


    Beteiligte:
    Hou, H.Q. (Autor:in) / Choquette, K.D. (Autor:in) / Coltrin, M.E. (Autor:in) / Hammons, B.E. (Autor:in) / Geib, K.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    147998 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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