We report our results on InGaNAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications at 1.3 /spl mu/m range. The epitaxial layers were grown on the n-GaAs substrate in a MOCVD system. The nitrogen composition of the InGaNAs/GaAs active region is 0 to 0.01. These InGaNAs VCSELs show continuous-wave (CW) lasing operation at room temperature.


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    Title :

    Characteristics of InGaNAs vertical-cavity surface-emitting lasers


    Contributors:


    Publication date :

    2003-01-01


    Size :

    62127 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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